inchange semiconductor product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 1 isc silicon npn power transistor 2SD1857 description high breakdown voltage. (bv ceo = 120v) low collector output capacitance. high transition frequency. (ft = 50mhz) complement to type 2sb1236 applications designed for audio amplifier, voltage regulator, and general purpose power amplifiers. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 120 v v ceo collector-emitter voltage 120 v v ebo emitter-base voltage 5 v i c collector current-continuous 1.5 a i cp collector current-pulse 3 a p c collector power dissipation 10 w t j junction temperature 150 t stg storage temperature range -55~150
inchange semiconductor product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 2 isc silicon npn power transistor 2SD1857 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ce(sat) collector-emitter sa turation voltage i c = -1a; i b = -0.1a 2 v v be(sat) base-emitter satu ration voltage i c = -1a; i b = -0.1a 1.5 v i cbo collector cutoff current v cb = -100v; i e = 0 1.0 a i ebo emitter cutoff current v eb = -4v; i c = 0 1.0 a h fe-1 dc current gain i c = -0.1a ; v ce = -5v 120 390 f t current-gain?bandwidth product i c = -0.1a ; v ce = -5v 50 mhz c ob output capacitance i e =0; v cb = -10v, f test = 1mhz 30 pf
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